SEM micrographs to compare in situ layer-by-layer anneal (TDMAT/H2O/air ALD) vs. ex situ PDA air anneal. (a) 15 nm TDMAT/H2O/35 s air ALD-TiO2 deposited at 200 °C with 8.66 h total process time. (b) 15 nm TDMAT/H2O/35 s air ALD-TiO2 deposited at 200 °C with 8.66 h process time plus 0.47 h post-deposition anneal (PDA) in an oven in air at 200 °C, resulting in a total time of 9.13 h at 200 °C. (c) 15 nm TDMAT/H2O/40 s air ALD-TiO2 deposited at 200 °C with 9.13 h total process time.

 
 
  Part of: Wooding JP, Kalaitzidou K, Losego MD (2024) Crystalline as-deposited TiO 2 anatase thin films grown from TDMAT and water using thermal atomic layer deposition with in situ layer-by-layer air annealing. Atomic Layer Deposition 2: 1-18. https://doi.org/10.3897/aldj.2.117753