(a) TiO2 film thickness measured via spectroscopic ellipsometry (SE) for TDMAT/H2O ALD (hollow, crossed symbols) and TDMAT/H2O/air ALD (filled symbols) processes for between 114 and 1120 cycles at deposition temperatures: 180 °C, 200 °C, and 220 °C. GPC values are also notated in Angstrom per cycle. (b) Index of refraction (n) at 550 nm for 50 nm TiO2 thin films deposited at 180 °C, 200 °C, and 220 °C by both TDMAT/H2O ALD and TDMAT/H2O/air ALD processes.

 
 
  Part of: Wooding JP, Kalaitzidou K, Losego MD (2024) Crystalline as-deposited TiO 2 anatase thin films grown from TDMAT and water using thermal atomic layer deposition with in situ layer-by-layer air annealing. Atomic Layer Deposition 2: 1-18. https://doi.org/10.3897/aldj.2.117753