Crystalline as-deposited TiO 2 anatase thin films grown from TDMAT and water using thermal atomic layer deposition with in situ layer-by-layer air annealing

Figure 13.

GIXRD scans for 1120 total cycles TiO₂ thin films deposited at 180 °C. Bottom to top: Si wafer substrate, TDMAT/H₂O ALD, 3:1 TDMAT/H₂O ALD to TDMAT/H₂O/air ALD, 1:1 TDMAT/H₂O ALD to TDMAT/H₂O/air ALD, and TDMAT/H₂O/air ALD. The three primary TiO₂-anatase peaks are labeled where present: 2θ = 25.3°, 37.8°, 48.0°.

	Figure 13. GIXRD scans for 1120 total cycles TiO₂ thin films deposited at 180 °C. Bottom to top: Si wafer substrate, TDMAT/H₂O ALD, 3:1 TDMAT/H₂O ALD to TDMAT/H₂O/air ALD, 1:1 TDMAT/H₂O ALD to TDMAT/H₂O/air ALD, and TDMAT/H₂O/air ALD. The three primary TiO₂-anatase peaks are labeled where present: 2θ = 25.3°, 37.8°, 48.0°.
	Part of: Wooding JP, Kalaitzidou K, Losego MD (2024) Crystalline as-deposited TiO ₂ anatase thin films grown from TDMAT and water using thermal atomic layer deposition with in situ layer-by-layer air annealing. Atomic Layer Deposition 2: 1-18. https://doi.org/10.3897/aldj.2.117753