a) Raw XPS data for O1s, N1s and C1s within the bulk part of SiNx; b) baseline-subtracted Si-H and N-H modes as measured by FTIR. All SiNx layers were deposited at 200 °C by atmospheric-pressure spatial ALD at 10 RPM (red line), 40 RPM (black line), and 80 RPM (blue line).