a) shows the growth per cycle (GPC) at (red square) 200 °C and (black square) 250 °C as a function of BDEAS exposure for a fixed N2 plasma exposure time. b) GPC at 200 °C (red square) and 250 °C (black square) as a function of the plasma exposure time, for BDEAS exposures above saturation. While the BDEAS exposure results in saturating behavior, the GPC as a function of the plasma exposure time shows a non-ideal behavior.

 
 
  Part of: Shen J, Roozeboom F, Mameli A (2023) Atmospheric-pressure plasma-enhanced spatial atomic layer deposition of silicon nitride at low temperature. Atomic Layer Deposition 1: 1-11. https://doi.org/10.3897/aldj.1.101651