Atmospheric-pressure plasma-enhanced spatial atomic layer deposition of silicon nitride at low temperature

Figure 3.

a) Typical infrared spectrum for of a SiN_x layer deposited at 250 °C at 20 RPM, with Si-H and Si-N stretching mode, and N-H stretching and NH₂ scissoring mode indicated; b) total H-bond density (N-H plus Si-H) derived from FITR measurements.

	Figure 3. a) Typical infrared spectrum for of a SiN_x layer deposited at 250 °C at 20 RPM, with Si-H and Si-N stretching mode, and N-H stretching and NH₂ scissoring mode indicated; b) total H-bond density (N-H plus Si-H) derived from FITR measurements.
	Part of: Shen J, Roozeboom F, Mameli A (2023) Atmospheric-pressure plasma-enhanced spatial atomic layer deposition of silicon nitride at low temperature. Atomic Layer Deposition 1: 1-11. https://doi.org/10.3897/aldj.1.101651