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SiNx layer thickness as a function of the number of spatial ALD cycles, for deposition at 150 °C, 200 °C and 250 °C. |
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| Part of: Shen J, Roozeboom F, Mameli A (2023) Atmospheric-pressure plasma-enhanced spatial atomic layer deposition of silicon nitride at low temperature. Atomic Layer Deposition 1: 1-11. https://doi.org/10.3897/aldj.1.101651 |