Transformation kinetics for low temperature post-deposition crystallization of TiO 2 thin films prepared via atomic layer deposition (ALD) from tetrakis(dimethylamino)titanium(IV) (TDMAT) and water


	Calculated grain size from SEM micrograph analysis as a function of ALD temperature (120 °C, 140 °C, and 160 °C) and post-deposition annealing temperature (160 °C, 180 °C, 200 °C, 220 °C).

Part of: Wooding JP, Gregory SA, Atassi A, Freychet G, Kalaitzidou K, Losego MD (2023) Transformation kinetics for low temperature post-deposition crystallization of TiO ₂ thin films prepared via atomic layer deposition (ALD) from tetrakis(dimethylamino)titanium(IV) (TDMAT) and water. Atomic Layer Deposition 1: 1-18. https://doi.org/10.3897/aldj.1.101276