Transformation kinetics for low temperature post-deposition crystallization of TiO 2 thin films prepared via atomic layer deposition (ALD) from tetrakis(dimethylamino)titanium(IV) (TDMAT) and water

SEM micrographs for TiO2 films deposited at a) 140 °C and post-deposition annealed (PDA) at 200 °C for i) 0 h, ii) 3.9 h, and iii) 10 h, at 180 °C for iv) 0 h, v) 12 h, and vi) 47 h, and at 160 °C for vii) 0 h, viii) 110 h, and ix) 327 h. SEM micrographs for TiO2 films deposited at b) 160 °C and post-deposition annealed (PDA) at 200 °C for i) 0 h, ii) 3.9 h, and iii) 5.9 h, at 180 °C for iv) 0 h, v) 12 h, and vi) 25 h, and at 160 °C for vii) 0 h, viii) 67 h, and ix) 109 h. Annealing time in hours is for the specified time, t, duration.